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Transistors
2SB1434
Silicon PNP epitaxial planer type
Unit: mm
For low-frequency output amplification Complementary to 2SD2177 I Features
* Low collector to emitter saturation voltage VCE(sat) * Allowing supply with the radial taping
6.90.1
1.05 2.50.1 0.05
(1.45) 0.8
0.15
0.7
4.0
0.65 max.
1.0 1.0
0.2
0.45-0.05
+0.1
1
2
3
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation * Junction temperature Storage temperature
VCBO VCEO VEBO ICP IC PC Tj Tstg
-50 -50 -5 -3 -2 1 150 -55 to +150
V V V A A W C C
1.20.1 0.65 max. 0.45+ 0.1 - 0.05
Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available.
1: Emitter 2: Collector 3: Base MT2 Type Package
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion
2.50.1
Parameter
Symbol
Rating
Unit
0.45-0.05
I Absolute Maximum Ratings Ta = 25C
+0.1
2.50.5
2.50.5
(HW Type)
I Electrical Characteristics Ta = 25C 3C
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio
*1
Symbol ICBO VCBO VCEO VEBO hFE1 hFE2
*2
Conditions VCB = -20 V, IE = 0 IC = -10 A, IE = 0 IC = -1 mA, IB = 0 IE = -10 A, IC = 0 VCE = -2 V, IC = -200 mA VCE = -2 V, IC = -1 A IC = -1 A, IB = -50 mA IC = -1 A, IB = -50 mA VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz
Min -50 -50 -5 120 60
Typ
Max - 0.1
14.50.5
0.5 4.50.1
Unit A V V V
340 - 0.2 - 0.85 110 40 60 - 0.3 -1.2
Collector to emitter saturation voltage *1 Base to emitter saturation voltage *1 Transition frequency Collector output capacitance Note) *1: Pulse measurement *2: Rank classification Rank hFE1 R 120 to 240
VCE(sat) VBE(sat) fT Cob
V V MHz pF
S 170 to 340
No-rank 120 to 340
Product of no-rank is not classified and have no indication for rank.
1
2SB1434
PC Ta
1.2 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness. -2.4
Transistors
IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
Ta = 25C
VCE(sat) IC
-10 -3 -1 IC / IB = 20
Collector power dissipation PC (W)
1.0
-2.0
Collector current IC (A)
0.8
-1.6
- 0.3 - 0.1 Ta = 100C 25C -25C
0.6
-1.2
IB = -8 mA -7 mA -6 mA -5 mA -4 mA -3 mA -2 mA -1 mA 0 -2 -4 -6 -8 -10
0.4
- 0.8
- 0.03 - 0.01
0.2
- 0.4
- 0.003 - 0.001 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10
0
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
Base to emitter saturation voltage VBE(sat) (V)
-100 -30 IC / IB = 20
500
hFE IC
VCE = -2 V
200
fT IE
VCB = -10 V Ta = 25C
Forward current transfer ratio hFE
Transition frequency fT (MHz)
-1 -3 -10
-10 -3 25C -1 Ta = -25C 75C
400
160
300 Ta = 100C 200 25C -25C 100
120
- 0.3 - 0.1
80
40
- 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10
0 - 0.01 - 0.03 - 0.1 - 0.3
0
1
3
10
30
100
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob VCB
240
Collector output capacitance Cob (pF)
200
IE = 0 f = 1 MHz Ta = 25C
160
120
80
40
0 -1
-3
-10
-30
-100
Collector to base voltage VCB (V)
2
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2001 MAR

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